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NTD2955, NVD2955
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = ? 0.25 mA)
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(V GS = 0 Vdc, V DS = ? 60 Vdc, T J = 25 ° C)
(V GS = 0 Vdc, V DS = ? 60 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
? 60
?
?
?
?
?
67
?
?
?
?
?
? 10
? 100
? 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V DS = V GS , I D = ? 250 m Adc)
(Negative Temperature Coefficient)
Static Drain ? Source On ? State Resistance
(V GS = ? 10 Vdc, I D = ? 6.0 Adc)
Drain ? to ? Source On ? Voltage
(V GS = ? 10 Vdc, I D = ? 12 Adc)
(V GS = ? 10 Vdc, I D = ? 6.0 Adc, T J = 150 ° C)
Forward Transconductance (V DS = 10 Vdc, I D = 6.0 Adc)
V GS(th)
R DS(on)
V DS(on)
gFS
? 2.0
?
?
? 2.8
4.5
0.155
? 1.86
?
8.0
? 4.0
?
0.180
? 2.6
? 2.0
?
Vdc
mV/ ° C
W
Vdc
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
500
750
pF
Output Capacitance
Reverse Transfer Capacitance
(V DS = ? 25 Vdc, V GS = 0 Vdc,
F = 1.0 MHz)
C oss
C rss
?
?
150
50
250
100
SWITCHING CHARACTERISTICS (Notes 3 and 4)
Turn ? On Delay Time
t d(on)
?
10
20
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = ? 30 Vdc, I D = ? 12 A,
V GS = ? 10 V, R G = 9.1 W )
t r
t d(off)
t f
?
?
?
45
26
48
85
40
90
Gate Charge
(V DS = ? 48 Vdc, V GS = ? 10 Vdc,
I D = ? 12 A)
Q T
Q GS
Q GD
?
?
?
15
4.0
7.0
30
?
?
nC
DRAIN ? SOURCE DIODE CHARACTERISTICS (Note 3)
Diode Forward On ? Voltage
(I S = 12 Adc, V GS = 0 V)
(I S = 12 Adc, V GS = 0 V, T J = 150 ° C)
Reverse Recovery Time
(I S = 12 A, dI S /dt = 100 A/ m s ,V GS = 0 V)
Reverse Recovery Stored Charge
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
? 1.6
? 1.3
50
40
10
0.10
? 2.5
?
?
?
?
Vdc
ns
m C
3. Indicates Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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